Quantum dots, lasers and amplifiers

Author

Bimberg, Dieter

Author_Institution

Inst. fur Festkorperphys., Technische Univ. Berlin, Germany

Volume

1

fYear

2001

fDate

2001

Firstpage

30

Abstract

Continuous wave room-temperature output power of ∼3 W for edge-emitters and of 0.8 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 μm. Long operation lifetimes and radiation hardness are manifested and cut-off frequency of about 10 GHz is realized. The breakthrough became possible due to development for self-organized growth in QD technology.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; life testing; quantum well lasers; radiation hardening (electronics); self-assembly; semiconductor optical amplifiers; semiconductor quantum dots; surface emitting lasers; 1.3 micron; 10 GHz; 3 W; GaAs; GaAs-based devices; InAs; InAs quantum dots; InAs-InGaAs; QD amplifiers; amplifiers; continuous wave room-temperature output power; cut-off frequency; edge-emitters; long operation lifetimes; quantum dots; radiation hardness; self-organized growth; vertical-cavity surface-emitting lasers; Atom optics; Gallium arsenide; Indium gallium arsenide; Optical surface waves; Power generation; Power lasers; Quantum dot lasers; Semiconductor lasers; US Department of Transportation; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 2001. ECOC '01. 27th European Conference on

Print_ISBN

0-7803-6705-7

Type

conf

DOI

10.1109/ECOC.2001.989418

Filename

989418