DocumentCode :
3783878
Title :
A high-frequency high-Q CMOS active inductor with DC bias control
Author :
A. Ilker Karsilayan;R. Schaumann
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Volume :
1
fYear :
2000
Firstpage :
486
Abstract :
The design of a very simple CMOS high-Q active inductor suitable for applications at low supply voltage and high frequencies is discussed. The inductor value, L, and the quality factor, Q, are independently adjustable by two PMOS varactors (variable capacitors). Alternatively, L can be tuned via a bias current. The inductor´s DC level is set by a bias voltage. The self-resonance frequency, f/sub r/, is larger than 1GHz and very high values of Q, up to Q=/spl infin/, can be obtained so that circuit can be used for constructing high-frequency oscillators. The performance of the electronic inductor is demonstrated by simulation.
Keywords :
"Active inductors","Frequency","Q factor","Circuit stability","Voltage","Equivalent circuits","Circuit simulation","Circuit noise","CMOS technology","Admittance"
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Print_ISBN :
0-7803-6475-9
Type :
conf
DOI :
10.1109/MWSCAS.2000.951689
Filename :
951689
Link To Document :
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