• DocumentCode
    3784166
  • Title

    Growth of PbTe crystals for thermoelectric applications

  • Author

    Xu Jiayue; Zhang Aiqiong

  • Author_Institution
    Inst. of Ceramics, Acad. Sinica, Shanghai, China
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    150
  • Lastpage
    153
  • Abstract
    A modified vertical Bridgman method was performed to grow PbTe single crystals for thermoelectric applications. A quartz ampoule was used as the crucible with the dimensions of 31 mm in inner diameter and 425 mm in length. PbTe was synthesized in the sealed crucible then grown at a rate of 0.1-0.3 mm/hr. The as-grown boule contained several large crystal grains and the largest size of the grain is 14 /spl times/ 22 /spl times/ 30 mm/sup 3/. The PbTe crystal has cubic structure determined by X-ray diffraction.
  • Keywords
    "Crystals","Thermoelectricity","Temperature control","Furnaces","Surface morphology","Lead compounds","Crystalline materials","Semiconductor materials","Infrared detectors","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-7205-0
  • Type

    conf

  • DOI
    10.1109/ICT.2001.979844
  • Filename
    979844