DocumentCode
3784166
Title
Growth of PbTe crystals for thermoelectric applications
Author
Xu Jiayue; Zhang Aiqiong
Author_Institution
Inst. of Ceramics, Acad. Sinica, Shanghai, China
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
150
Lastpage
153
Abstract
A modified vertical Bridgman method was performed to grow PbTe single crystals for thermoelectric applications. A quartz ampoule was used as the crucible with the dimensions of 31 mm in inner diameter and 425 mm in length. PbTe was synthesized in the sealed crucible then grown at a rate of 0.1-0.3 mm/hr. The as-grown boule contained several large crystal grains and the largest size of the grain is 14 /spl times/ 22 /spl times/ 30 mm/sup 3/. The PbTe crystal has cubic structure determined by X-ray diffraction.
Keywords
"Crystals","Thermoelectricity","Temperature control","Furnaces","Surface morphology","Lead compounds","Crystalline materials","Semiconductor materials","Infrared detectors","Temperature measurement"
Publisher
ieee
Conference_Titel
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
ISSN
1094-2734
Print_ISBN
0-7803-7205-0
Type
conf
DOI
10.1109/ICT.2001.979844
Filename
979844
Link To Document