• DocumentCode
    3784429
  • Title

    A CMOS magnetic field sensor

  • Author

    R.S. Popovic;H.P. Baltes

  • Volume
    18
  • Issue
    4
  • fYear
    1983
  • Firstpage
    426
  • Lastpage
    428
  • Abstract
    The authors present a novel, fully integrated magnetic field sensor made in the standard, polysilicon-gate CMOS technology. The circuit shows a sensitivity of 1.2 V/T with 10 V supply voltage and 100 /spl mu/A current consumption. The circuit consists of a pair of split-drain MOS transistors in a CMOS-differential amplifier-like configuration.
  • Keywords
    "Magnetic sensors","Voltage","CMOS technology","MOSFETs","Magnetic devices","Magnetic fields","Resistors","Integrated circuit technology","Silicon","Keyboards"
  • Journal_Title
    IEEE Journal of Solid-State Circuits
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1983.1051967
  • Filename
    1051967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3784429