DocumentCode
378595
Title
MgxZn1-xO: a new piezoelectric material
Author
Emanetoglu, N.W. ; Muthukumar, S. ; Wu, P. ; Wittstruck, R. ; Lu, Y.
Author_Institution
Sch. of Eng., Rutgers Univ., Piscataway, NJ, USA
Volume
1
fYear
2001
fDate
2001
Firstpage
253
Abstract
Piezoelectric ZnO thin films have been successfully used for multi-layer surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices. Piezoelectric magnesium zinc oxide (MgxZn1-x O) films, which are formed by alloying ZnO and MgO, allow for flexibility in thin film SAW and BAW device design. The piezoelectric properties can be tailored by controlling the Mg content, as well as by using MgxZn1-xO/ZnO multilayer structures. In this study, ZnO and MgxZn1-xO (x⩽0.35) thin films are grown on R-plane sapphire substrates. Their SAW properties, including velocity dispersion and piezoelectric coupling, are characterized using test devices. Data for both Rayleigh and Love wave modes, propagating parallel and perpendicular to the c-axis, are presented. In piezoelectric MgxZn1-xO films, the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg content
Keywords
Love waves; MOCVD coatings; Rayleigh waves; acoustic wave velocity; magnesium compounds; piezoceramics; piezoelectric thin films; surface acoustic waves; Al2O3; BAW device design; Love wave mode; Mg content; MgxZn1-xO film; MgxZn1-xO/ZnO multilayer structures; MgZnO; Rayleigh wave mode; ZnO; ZnO-MgO alloying; piezoelectric coupling; piezoelectric material; piezoelectric properties; thin film SAW device design; velocity dispersion; Acoustic waves; Alloying; Bulk acoustic wave devices; Magnesium; Piezoelectric devices; Piezoelectric films; Surface acoustic wave devices; Surface acoustic waves; Thin film devices; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2001 IEEE
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-7177-1
Type
conf
DOI
10.1109/ULTSYM.2001.991620
Filename
991620
Link To Document