• DocumentCode
    3786159
  • Title

    SOI active pixel detectors of ionizing radiation-technology and design development

  • Author

    J. Marczewski;K. Domanski;P. Grabiec;M. Grodner;B. Jaroszewicz;A. Kociubinski;K. Kucharski;D. Tomaszewski;W. Kucewicz;S. Kuta;W. Machowski;H. Niemiec;M. Sapor;M. Caccia

  • Author_Institution
    Inst. of Electron Technol., Warsaw, Poland
  • Volume
    51
  • Issue
    3
  • fYear
    2004
  • Firstpage
    1025
  • Lastpage
    1028
  • Abstract
    This paper concerns the development of a novel monolithic active pixel radiation sensor based on SOI technology. In this device, the sensitive volume corresponds to a high resistivity SOI "handle" wafer and the front-end CMOS electronics is integrated in the SOI device layer. Pixel test matrices have been manufactured and are under extensive characterization. The conceptual design, together with architecture and technology issues is addressed; the latest experimental results are reported.
  • Keywords
    "Radiation detectors","Ionizing radiation","Silicon on insulator technology","Conductivity","Substrates","CMOS technology","Testing","Active matrix technology","Manufacturing","Ionizing radiation sensors"
  • Journal_Title
    IEEE Transactions on Nuclear Science
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2004.829540
  • Filename
    1312010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3786159