A Bluetooth radio in 0.18 /spl mu/m CMOS

Author

van Zeijl, P.T.M. ; Eikenbroek, J.-W. ; Vervoort, P.-P. ; Setty, S. ; Tangenberg, J. ; Shipton, G. ; Kooistra, E. ; Keekstra, I. ; Belot, D.

Author_Institution

Ericsson Eurolab Netherlands, Emmen, Netherlands

Volume

1

fYear

2002

fDate

7-7 Feb. 2002

Firstpage

86

Abstract

A Bluetooth radio in 0.18 /spl mu/m CMOS technology works on 2.5-3.0 V, dissipating 75 mW in RX and 90 mW in TX. RX uses a 2 MHz IF with an active poly-phase bandpass filter. The fractional-N PLL uses a VCO running at 5 GHz. TX uses IQ modulation. Special attention is paid to Si-crosstalk because this radio is combined with baseband circuitry. Silicon area is 5.5 mm/sup 2/.

Keywords

CMOS analogue integrated circuits; active filters; band-pass filters; crosstalk; phase locked loops; voltage-controlled oscillators; wireless LAN; 0.18 micron; 2.5 to 3.0 V; 5 GHz; 75 mW; 90 mW; Bluetooth radio; CMOS; IQ modulation; Si; VCO; active poly-phase bandpass filter; baseband circuitry; crosstalk; fractional-N PLL; Active filters; Application specific integrated circuits; Band pass filters; Bluetooth; CMOS technology; Capacitance; Frequency; Phase locked loops; Radio transmitters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7335-9

Type

conf

DOI

10.1109/ISSCC.2002.992951

Filename

992951