Title :
A quasi-matrix ferroelectric memory for future silicon storage
Author :
Nishihara, T. ; Ito, Y.
Author_Institution :
Sony Corp., Tokyo, Japan
Abstract :
This paper describes a quasi-matrix (Q-matrix) ferroelectric memory unit for future silicon storage media which consists of multiple ferroelectric capacitors that store individual bits and share one access transistor. Disturb degradation and cross-talk effects are suppressed to an acceptable level. The capacitors can be multi-stacked, increasing packing density by a number of times.
Keywords :
crosstalk; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; integrated circuit layout; integrated circuit testing; integrated memory circuits; random-access storage; Q-matrix ferroelectric memory; cross-talk effects suppression; disturb degradation effects suppression; ferroelectric capacitors; individual bit storage; memory unit; multi-stacked capacitors; packing density; quasi-matrix ferroelectric memory; shared access transistor; silicon storage media; Capacitors; Degradation; Ferroelectric films; Ferroelectric materials; Flash memory; Frequency; Nonvolatile memory; Random access memory; Silicon; Stress;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.992985
