3788267

Correction to "Line shape in GaAs injection lasers"

G. Burns;M.I. Nathan

IBM Corp., Yorktown Heights, N. Y.

51

5

1963

860

860

"Shape","Gallium arsenide","P-n junctions","Heterojunctions","Semiconductor diodes","Electromagnetic wave absorption","Temperature dependence","Optical coupling","Production","Semiconductor device doping"

Proceedings of the IEEE

ieee

0018-9219

jour

10.1109/PROC.1963.2295

1444225