Title :
GaAs Read-type IMPATT diodes for D-band
Author :
M. Tschernitz;J. Freyer;H. Grothe
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotech., und Angewandte Elektronik, Munchen, Germany
fDate :
6/23/1994 12:00:00 AM
Abstract :
GaAs Read-type IMPATT diodes for operation at D-band frequencies have been designed and fabricated. The main design feature is low DC input voltage and high current density. The devices are encapsulated using the novel module technique on diamond heatsinks. RF output powers of 75 mW at 120 GHz and 8 mW at 144 GHz are realised. The highest oscillation frequency for CW operation is 150 GHz.
Keywords :
"Gallium compounds","IMPATT diodes","Microwave devices","Semiconductor device modeling","Semiconductor device fabrication"
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940713
