Title :
Effect of radiation-induced oxide-trapped charge on mobility in p-channel MOSFETs
Author :
N. Stojadinovic;M. Pejovic;S. Golubovic;G. Ristic;V. Davidovic;S. Dimitrijev
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
fDate :
3/16/1995 12:00:00 AM
Abstract :
It is shown that radiation-induced oxide-trapped charge contributes to an increase in mobility in p-channel MOSFETs. A new scattering mechanism involving retardation of surface-roughness scattering due to oxide-trapped charge is proposed in order to explain the observed mobility increase.
Keywords :
"Charge carrier mobility","MOSFETs","Radiation effects"
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950302
