• DocumentCode
    3796383
  • Title

    Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing

  • Author

    F. Miller;A. Luu;F. Prud´homme;P. Poirot;R. Gaillard;N. Buard;T. Carrire

  • Author_Institution
    Corporate Res. Center, Eur. Aeronaut. Defence & Space Co., Suresnes
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3145
  • Lastpage
    3152
  • Abstract
    This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It is shown that this technique can be used to define the safe operating area
  • Keywords
    "MOSFET circuits","Power MOSFET","Power lasers","Voltage","Performance evaluation","Circuit testing","Neutrons","Protons","Power supplies","Capacitors"
  • Journal_Title
    IEEE Transactions on Nuclear Science
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.885376
  • Filename
    4033721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3796383