• DocumentCode
    379667
  • Title

    An accurate method for extracting the critical field in short channel NMOS devices

  • Author

    Amhouche, Y. ; El Abbassi, A. ; Rais, K. ; Rmaily, R.

  • Author_Institution
    Lab. de Caracterisation des Composants a Semi-conducteurs, Univ. Chouaib Doukkali, El Jadida, Morocco
  • fYear
    2001
  • fDate
    29-31 Oct. 2001
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    In this paper, an accurate method for extracting the critical field Ec in short channel MOSFET´s is presented. The principle of this method is based on the comparison between two models which give drain saturation voltage evolution against gate voltage Vdsat(Vg) continuously. The results obtained by this technique have shown better agreement with measurement data and have allow at the same time to determine the validity domain of Sodini´s law.
  • Keywords
    MOSFET; electric fields; semiconductor device models; Sodini´s law; critical field extraction; drain saturation voltage; gate voltage; models; n-MOSFET; n-channel MOSFETs; short channel NMOS devices; Analytical models; Data mining; Equations; Impact ionization; Linearity; MOS devices; MOSFETs; Testing; Threshold voltage; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
  • Print_ISBN
    0-7803-7522-X
  • Type

    conf

  • DOI
    10.1109/ICM.2001.997488
  • Filename
    997488
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=379667