DocumentCode :
3798416
Title :
Correspondence
Volume :
50
Issue :
10
fYear :
1962
Firstpage :
2106
Lastpage :
2147
Keywords :
"P-n junctions","Semiconductor devices","Anisotropic magnetoresistance","Semiconductor diodes","Microphones","Electric breakdown","Stress control","Capacitive sensors","Semiconductor device breakdown","Isobaric"
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1962.288248
Filename :
4066554
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3798416