Title :
High-power FETs application in S-band amplifier
Author_Institution :
Wroclaw Div., Telecommun. Res. Inst., Wroclaw, Poland
Abstract :
A 15 Watt pulsed amplifier design in S-band using Fujitsu GaAs FETs is presented. The essential elements, namely, FET characterization for power and efficiency, stability and forward gate current protection are described. The paper concludes with some experimental results of the realized amplifier which has a frequency range of 3.0-3.5 GHz and an insertion gain of 30 dB minimum.
Keywords :
circuit CAD; circuit stability; microwave power amplifiers; power field effect transistors; pulse amplifiers; 15 W; 3 to 3.5 GHz; 30 dB; CAD; FET power/efficiency characterization; FET stability; GaAs; S-band pulsed amplifier design; forward gate current protection; high-power GaAs FET; microwave power amplifiers; Circuit stability; FETs; Gallium arsenide; High power amplifiers; Impedance matching; Power amplifiers; Protection; Pulse amplifiers; Resistors; Schottky diodes;
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2002. MIKON-2002. 14th International Conference on
Print_ISBN :
83-906662-5-1
DOI :
10.1109/MIKON.2002.1017900
