Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

Author

Defrance, Nicolas ; Lecourt, Francois ; Douvry, Y. ; Lesecq, Marie ; Hoel, Virginie ; Lecavelier des Etangs-Levallois, Aurelien ; Cordier, Yvon ; Ebongue, A. ; De Jaeger, J.C.

Author_Institution

Cite Sci., Inst. of Electron., Microelectron. & Nanotechnol. (IEMN), Villeneuve d´Ascq, France

Volume

60

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

1054

Lastpage

1059

Abstract

This paper reports on the dc analysis and radio frequency (RF) characterization of a flexible AlGaN/GaN high-electron mobility transistor with a 120-nm gate length. The device provides a maximum dc current density of 470 mA/mm and a peak extrinsic transconductance of 125 mS/mm under flat condition. When the substrate is bent with 0.88% strain, a rise in the 2-DEG density is experimentally observed through the diminution of the on-resistance. This phenomenon is physically attributed to the modification of the piezoelectric field within the barrier under tensile condition. The device also shows a current gain cutoff frequency (F_t) of 32 GHz and a power gain cutoff frequency (F_max) of 52 GHz. No major variations of RF performance are observed under bending.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; piezoelectric devices; piezoelectric semiconductors; piezoelectricity; two-dimensional electron gas; wide band gap semiconductors; 2-DEG density; AlGaN-GaN; DC analysis; HEMT; RF characterization; barrier under tensile condition; bending; current gain cutoff frequency; flexible high-electron mobility transistor; flexible substrate; frequency 32 GHz; frequency 52 GHz; maximum DC current density; on-resistance diminution; peak extrinsic transconductance; physical analysis; piezoelectric field modification; power gain cutoff frequency; radiofrequency characterization; size 120 nm; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Silicon; Substrates; Electrical characterization; GaN; flexible substrate; high-electron mobility transistors (HEMTs); strain;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2238943

Filename

6425450