Title :
Strong room temperature photoluminescence from erbium-doped silicon monoxide
Author :
S.W. Roberts;G.J. Parker
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
Evaporated films of SiO:Er on silicon substrates are shown to exhibit strong photoluminescence after annealing at 600/spl deg/C for 30 min in argon. With an erbium concentration of /spl sim/2.7/spl times/10/sup 20/ cm/sup -3/, the /sup 4/I/sub 13/2/-/sup 4/I/sub 15/2/ transition is found to decay with two exponential components.
Keywords :
"Silicon compounds","Erbium","Vapor deposition","Coatings","Annealing","Amorphous semiconductors","Semiconductor films","Photoluminescence"
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950964
