Temperature-induced rebound in Al-gate NMOS transistors

A rebound effect in irradiated Al-gate NMOS transistors for irradiation doses of 50, 100 and 2000 Gy has been explored. This effect during temperature-bias annealing is caused both by the neutralisation of positive oxide charge by electron tunnelling from silicon, and by a nonsignificant change in the number of interface traps created during irradiation of gamma-rays. It is shown that rebound effect increases with the increase of the total dose irradiation of NMOS transistors. This effect was also observed in irradiated Si-gate transistors for an irradiation dose of 1000 Gy.