• DocumentCode
    3812975
  • Title

    Monolithic GaAs MESFET power sensor microsystem

  • Author

    T. Lalinsky;J. Kuzmik;M. Porges;S. Hascik;Z. Mozolova;L. Grno

  • Author_Institution
    Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
  • Volume
    31
  • Issue
    22
  • fYear
    1995
  • Firstpage
    1914
  • Lastpage
    1915
  • Abstract
    The authors present the principle, technology and properties of a novel power sensor microsystem designed for very precise power measurement in a broad frequency range. Bulk micromachining technology on GaAs was implemented to obtain the desired parameters of the sensor.
  • Keywords
    "Gallium compounds","Power measurement","Micromachining","MESFET integrated circuits","Detectors","Microsensors"
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951295
  • Filename
    490656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3812975