Title :
A time-delay-integration CMOS readout circuit for IR scanning
Author :
Tsai, Fu-Kai ; Huang, Hong-Yi ; Dai, Li-Kuo ; Chiang, Cheng-Der ; Weng, Ping-Kuo ; Chin, Yung-Chung
Author_Institution :
Dept. of Electron. Eng., Fu-Jen Univ., Taiwan
Abstract :
This paper presents a CMOS readout circuit for an infrared focal plane arrays (FPA). The time delay and integration (TDI) technique is applied to increase the integration time and the signal-to-noise ratio of the readout circuit. By detecting the impedance of the photovoltaic mercury cadmium telluride (HgCdTe-MCT) photodiodes, the faulty photodiodes can be detected. Then the photocurrent at the faulty diodes is cut from the integration path. A test chip is designed using a 0.35 μm CMOS process. The cell arrays are composed of 32 lines of four pixels. The chip consumes 100 mW at 3.3 V. It provides 2-MHz scanning speed with 77-dB dynamic range.
Keywords :
CMOS integrated circuits; II-VI semiconductors; cadmium compounds; focal planes; mercury compounds; photodiodes; readout electronics; 0.35 micron; 100 mW; 2 MHz; 3.3 V; CMOS readout circuit; HgCdTe; IR scanning; cell arrays; dynamic range; focal plane arrays; photocurrent; photodiodes; scanning speed; signal-to-noise ratio; time-delay-integration; Cadmium compounds; Circuit faults; Delay effects; Electrical fault detection; Fault detection; Impedance; Photodiodes; Photovoltaic systems; Signal to noise ratio; Solar power generation;
Conference_Titel :
Electronics, Circuits and Systems, 2002. 9th International Conference on
Print_ISBN :
0-7803-7596-3
DOI :
10.1109/ICECS.2002.1045405
