Native Graphene Oxides at Graphene Edges

Author

Shimamoto, Shigeru ; Naitou, Y. ; Fukuyama, Yasuhiro ; Kiryu, Syogo ; Kaneko, Naoya

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Nat. Metrol. Inst. of Japan, Tsukuba, Japan

Volume

62

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

1461

Lastpage

1466

Abstract

Electronic properties of graphene edges on a SiO₂ substrate have been examined using scanning probe microscopy. Distinctive dot-like protrusions appearing nearly periodically on the edges of graphene were observed, and the density of the protrusions increased as the number of graphene layers increased. Imaging analysis revealed that the electrostatic properties of these protrusions are different from those of surrounding graphene. These findings are discussed and interpreted in terms of the local oxidation at the native graphene edges.

Keywords

annealing; electrostatics; graphene; scanning probe microscopy; silicon compounds; C; SiO₂; dot-like protrusions; electronic properties; electrostatic properties; graphene edge; graphene layer; native graphene oxides; scanning probe microscopy; Force; Graphene; Image edge detection; Microscopy; Oxidation; Probes; Surfaces; Graphene nanoribbon (GNR); graphene; quantized Hall resistance (QHR) standard; quantum Hall effect; scanning capacitance microscopy (SCM); scanning probe microscopy (SPM);

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.2013.2238454

Filename

6425476