Title :
Study of RC-snubber for series IGCTs
Author :
Jiming, Lu ; Dan, Wang ; Chengxiong, Mao ; Shu, Fan
Author_Institution :
Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
A new power semiconductor device, integrated gate commutated thyristor (IGCT), is used in three-level high power and medium voltage inverters. It is claimed that the turn-off snubbers for IGCTs are not necessary. However, for series connected IGCTs, a simple snubber is usually needed. In this paper, the behavior of the RC-snubber is analyzed and the simulations are done. The effects based on the different parameters of the snubber are compared and discussed. Simulation results show that good performance can be achieved when RC-snubber is adopted.
Keywords :
DC-AC power convertors; invertors; power semiconductor switches; snubbers; switching convertors; thyristor convertors; thyristors; RC-snubber; integrated gate commutated thyristor; power semiconductor device; series-connected IGCTs; three-level inverters; turn-off snubbers; Analytical models; Circuit simulation; Leakage current; Medium voltage; Power semiconductor devices; Pulse width modulation inverters; Resistors; Semiconductor devices; Snubbers; Thyristors;
Conference_Titel :
Power System Technology, 2002. Proceedings. PowerCon 2002. International Conference on
Print_ISBN :
0-7803-7459-2
DOI :
10.1109/ICPST.2002.1053612
