DocumentCode
3851797
Title
Electrothermally Actuated and Piezoelectrically Sensed Silicon Carbide Tunable MEMS Resonator
Author
B. Svilicic;E. Mastropaolo;B. Flynn;R. Cheung
Author_Institution
Scottish Microelectronics Centre, Institute for Integrated Micro and Nano Systems, School of Engineering, The University of Edinburgh, Edinburgh, U.K.
Volume
33
Issue
2
fYear
2012
Firstpage
278
Lastpage
280
Abstract
In this letter, we present the design, fabrication, and electrical testing of a silicon carbide microelectromechanical (MEMS) resonant device with electrothermal actuation and piezoelectric sensing. A doubly clamped flexural-mode beam resonator made of cubic silicon carbide has been fabricated with a top platinum electrothermal actuator and a top lead zirconium titanate piezoelectric sensor. Electrothermal transduction has been used to drive the device into resonance and tune its frequency. Piezoelectric transduction has been used as resonance sensing technique. Electrical measurements have shown that, by increasing the dc bias of the actuating voltage from 1 to 7 V, a tuning range of 171 kHz can be achieved with a device resonating at 1.766 MHz.
Keywords
"Resonant frequency","Silicon carbide","Electrodes","Micromechanical devices","Voltage measurement","Silicon","Frequency measurement"
Journal_Title
IEEE Electron Device Letters
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2177513
Filename
6125977
Link To Document