A monolithically integrated magnetic field sensor system

In this paper, we introduce a novel silicon Hall device as an accurate magnetic field sensor. The structure design is well adapted to minimize the parasitic effects that limit the sensitivity and accuracy. Sensor structure and the detailed biasing conditions are optimized for the goal of high linearity and low offset variation. For these reasons, the Hall device is embedded in a symmetrical configuration in a one-chip integrated system, providing for biasing, signal amplification and calibration, so that the major effects of parasitic elements are either minimized, or reciprocally compensated. High sensitivity, low offset, and high linearity over large ranges of magnetic field induction are obtained.