Polysilicon thin layers for photovoltaic applications

Author

Budianu, Elena ; Purica, Munizer ; Rusu, Emil ; Manea, Elena ; Gavrila, Raluca

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania

Volume

1

fYear

2002

fDate

2002

Firstpage

215

Abstract

Thin layers of polycrystalline silicon as the optically absorbing material for photovoltaic devices represents a promising way for simultaneously achieving good performances and low manufacturing cost. In this paper, the preparation of polysilicon thin layers together with technological process for a p-i-n type photovoltaic cell fabrication are presented. The crystalline structure, surface morphology and optical properties were investigated by AFM technique, X-ray diffraction and spectrophotometer measurements.

Keywords

X-ray diffraction; atomic force microscopy; elemental semiconductors; light absorption; p-i-n photodiodes; photovoltaic cells; semiconductor device measurement; semiconductor thin films; silicon; spectrophotometry; surface morphology; AFM; Si; X-ray diffraction; crystalline structure; manufacturing cost; optical properties; optically absorbing material; p-i-n type photovoltaic cell fabrication; photovoltaic applications; photovoltaic devices; polycrystalline silicon; polysilicon thin layers; spectrophotometer measurements; surface morphology; technological process; Costs; Crystalline materials; Manufacturing; Optical devices; Optical materials; PIN photodiodes; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105834

Filename

1105834