DocumentCode
385267
Title
Variable-gain inversion layer emitter phototransistor in CMOS technology
Author
Jankovic, Nebojsa ; Jovanovic, Elva
Author_Institution
Fac. of Electron. Eng., Nis Univ., Serbia
Volume
1
fYear
2002
fDate
2002
Firstpage
219
Abstract
The vertical bipolar phototransistor in CMOS technology employing the inversion emitter concept has been analysed by simulation and experiment. It is found that the inversion emitter substantially increases current gain, particularly at low current levels, which yields a high output photo-current. In addition, current gain and photo-current magnitude can be controlled by the external gate voltage which gives the potential for a number of novel applications.
Keywords
CMOS integrated circuits; circuit simulation; integrated circuit measurement; integrated circuit modelling; inversion layers; photoconductivity; phototransistors; CMOS technology; current gain; external gate voltage; inversion emitter concept; output photo-current magnitude; simulation; variable-gain inversion layer emitter phototransistor; vertical bipolar phototransistor; Analytical models; CMOS image sensors; CMOS process; CMOS technology; Optical beams; Photoconductivity; Phototransistors; Threshold voltage; Unified modeling language; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN
0-7803-7440-1
Type
conf
DOI
10.1109/SMICND.2002.1105835
Filename
1105835
Link To Document