• DocumentCode
    38537
  • Title

    THz Measurements and Calibration Based on a Blackbody Source

  • Author

    Svetlitza, Alexander ; Slavenko, Michael ; Blank, Tanya ; Brouk, Igor ; Stolyarova, Sara ; Nemirovsky, Yael

  • Author_Institution
    Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
  • Volume
    4
  • Issue
    3
  • fYear
    2014
  • fDate
    May-14
  • Firstpage
    347
  • Lastpage
    359
  • Abstract
    This paper presents a low-cost measurement setup for THz applications, based on a blackbody source, which is a commercial off-the-shelf (COTS) component. This measurement approach resembles the natural operating conditions of passive imaging systems and hence is more adequate in the characterization of the operation of THz sensors and filters for passive systems than narrowband THz sources. The calibration methodology of mesh filters that may block the unwanted IR radiation as well as that of THz thermal sensors is discussed. The components for uncooled passive thermal imaging: the innovative CMOS-SOI-NEMS thermal sensor (the TeraMOS) as well as mesh filters are characterized in the measurement setup presented here. The TeraMOS sensor reported here is a small array of 4 ×4 pixels, each 100 ×100 (μm)2, with CMOS transistors with W/L=2/40, which are electrically connected but are thermally isolated. The NEP is of the order of NEP/√Hz|1 Hz=10 pW/√Hz, when viewing blackbodies at T=1300 K. The values of D* and NETD, obtained from this NEP, are 0.2·1010 cm√Hz/W and ~ 0.2 K. The corresponding NETD of a single pixel is ~ 0.8 K, indicating that this uncooled THz sensor in standard CMOS-SOI technology may enable monolithic uncooled passive THz imagers.
  • Keywords
    CMOS image sensors; blackbody radiation; calibration; infrared imaging; nanosensors; silicon-on-insulator; terahertz wave detectors; CMOS transistors; CMOS-SOI-NEMS thermal sensor; Si; THz measurements; THz sensors; TeraMOS sensor; blackbody source; calibration; commercial off-the-shelf component; mesh filters; monolithic uncooled passive THz imagers; temperature 1300 K; uncooled passive thermal imaging:; Choppers (circuits); Imaging; Temperature measurement; Temperature sensors; Wavelength measurement; CMOS; MOS transistors; NEMS; SOI; THz filters; THz sensors; passive THz imaging;
  • fLanguage
    English
  • Journal_Title
    Terahertz Science and Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-342X
  • Type

    jour

  • DOI
    10.1109/TTHZ.2014.2309003
  • Filename
    6774490