• DocumentCode
    385757
  • Title

    A Miniature 2-18 GHz Monolithic GaAs Distributed Amplifier

  • Author

    Kennan, Wayne ; Andrade, Tom ; Huang, Charlle

  • Volume
    84
  • Issue
    1
  • fYear
    1984
  • fDate
    30803
  • Firstpage
    41
  • Lastpage
    44
  • Abstract
    A 2-18 GHz monolithic GaAs distributed amplifier has been developed with over 6dB gain +- 0.5 dB gain ripple, less ttlan 2.0 input and output VSWR less than 7.5 dB noise figure, and greater than 17 dBm power output capability. The amplifier is designed with dual-gate GaAs FET´s and measures .75 mm by .85 mm (.64 mm2). The small size insures high circuit yield and makes the part cost effective for general applications.
  • Keywords
    Circuits; Degradation; Distributed amplifiers; FETs; Fabrication; Gallium arsenide; Inductance; Radio frequency; Resistors; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1984.1113599
  • Filename
    1113599
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=385757