DocumentCode
385774
Title
A 2-W Ku-Band Monolithic GaAs FET Amplifier
Author
Macksey, H.M. ; Tserng, H.Q. ; Shih, H.D.
Volume
85
Issue
1
fYear
1985
fDate
31199
Firstpage
27
Lastpage
30
Abstract
A monolithic three-stage Ku-band GaAs FET power amplifier has been designed, fabricated. Epitaxial layers are grown by molecular beam epitaxy FETs have a source overlay geometry with the n+ ledge channel structure. The amplifiers have up to 2 W output power at 16.5 GHz with 12 dB gain, 20% efficiency.
Keywords
Bridge circuits; Broadband amplifiers; Distributed parameter circuits; Gallium arsenide; Geometry; High power amplifiers; Microwave FETs; Power amplifiers; Power generation; Power transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1985.1113631
Filename
1113631
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