• DocumentCode
    385791
  • Title

    A High Performance 2-18.5 GHz Distributed Amplifier, Theory and Experiment

  • Author

    Mckay, Tom ; Williams, Ralph

  • Volume
    86
  • Issue
    1
  • fYear
    1986
  • fDate
    31564
  • Firstpage
    27
  • Lastpage
    31
  • Abstract
    A high performance 2-18.5 GHz monolithic GaAs MESFET distributed ampIifier has been designed and fabricated. The m-derived drain line design is analyzed theoretically and a closed form gain equation is presented. Theoretical predictions are compared to measured results and more complicated CAD models. The measured small signal gain is typically 8.0 +- 0.25dB from 2-18.5 GHz at standard bias. Typical input return loss is greater than 12dB and the output return loss is greater than 15dB. The saturated output power is in excess of 23dBm over most of the band and the noise figure is less than 7.5dB.
  • Keywords
    Design automation; Distributed amplifiers; Equations; Gain measurement; Gallium arsenide; MESFETs; Measurement standards; Noise figure; Power generation; Predictive models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1986.1114474
  • Filename
    1114474
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=385791