• DocumentCode
    385795
  • Title

    A W-Band Monolithic GaAs PIN Diode Switch

  • Author

    Nesbit, Gerald H. ; Wong, Danny W. ; Li, Danny ; Chen, James C.

  • Volume
    86
  • Issue
    1
  • fYear
    1986
  • fDate
    31564
  • Firstpage
    51
  • Lastpage
    55
  • Abstract
    A state-of-the-art performance has been achieved for a W-band monolithic single-pole-single-throw PIN diode switch. An insertion loss of less than 0.5 dB with return loss greater than 15 dB (transmission mode) and an isolation greater than 11 dB (isolation mode) have been measured over a 6 GHz bandwidth (80 to 86 GHz).
  • Keywords
    Bandwidth; Contact resistance; Forward contracts; Gallium arsenide; Millimeter wave radar; Millimeter wave technology; Ohmic contacts; Propagation losses; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1986.1114478
  • Filename
    1114478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=385795