• DocumentCode
    385974
  • Title

    Ka-Band GaAs Power FETs

  • Author

    Yong-Hoon Yun ; Taylor, G.C. ; Bechtle, D.S. ; Jolly, S.T. ; Liu, S.G. ; Camisa, R.L.

  • fYear
    1983
  • fDate
    May 31 1983-June 3 1983
  • Firstpage
    136
  • Lastpage
    138
  • Abstract
    Ka-band results using submicrometer gate length, air-bridged, soldered flip-chip GaAs power FETs in finline, ridge-waveguide circuits are reported. Conventional photolithography was used to fabricate FETs with submicrometer gate lengths by using the undercut associated with chemical etching. At 35 GHz an output power of 91 mW at 3 dB gain and 4.5% efficiency was measured.
  • Keywords
    Chemicals; Circuits; Etching; FETs; Finline; Gain; Gallium arsenide; Lithography; Power generation; Power measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1983 IEEE MTT-S International
  • Conference_Location
    Boston, MA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1983.1130835
  • Filename
    1130835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=385974