• DocumentCode
    385986
  • Title

    Optimum Design of Non Linear Power FET Amplifiers

  • Author

    Guo, C. ; Camiade, M. ; Rousset, D. ; Cessey, A. ; Obregon, J. ; Bert, A.

  • Volume
    1
  • fYear
    1987
  • fDate
    May 9 1975-June 11 1987
  • Firstpage
    111
  • Lastpage
    113
  • Abstract
    In this paper, an efficient approach to optimum design of power amplifiers stages is described. The impedances presented to the FET are optimized independently of the topology chosen for their realization. They are then synthetized by usual methods of linear circuits. The proposed method has been applied to the design of broadband power FET amplifiers. The realizations have given a good correlation between the theoretical and experimental results. Moreover, the method may be used to the optimum design of power FET multipliers.
  • Keywords
    Bit error rate; Broadband amplifiers; Circuit topology; Equations; Gallium arsenide; Linear circuits; MESFET circuits; Microwave FETs; Optimization methods; Power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1987 IEEE MTT-S International
  • Conference_Location
    Palo Alto, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1987.1132338
  • Filename
    1132338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=385986