DocumentCode :
385986
Title :
Optimum Design of Non Linear Power FET Amplifiers
Author :
Guo, C. ; Camiade, M. ; Rousset, D. ; Cessey, A. ; Obregon, J. ; Bert, A.
Volume :
1
fYear :
1987
fDate :
May 9 1975-June 11 1987
Firstpage :
111
Lastpage :
113
Abstract :
In this paper, an efficient approach to optimum design of power amplifiers stages is described. The impedances presented to the FET are optimized independently of the topology chosen for their realization. They are then synthetized by usual methods of linear circuits. The proposed method has been applied to the design of broadband power FET amplifiers. The realizations have given a good correlation between the theoretical and experimental results. Moreover, the method may be used to the optimum design of power FET multipliers.
Keywords :
Bit error rate; Broadband amplifiers; Circuit topology; Equations; Gallium arsenide; Linear circuits; MESFET circuits; Microwave FETs; Optimization methods; Power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1987.1132338
Filename :
1132338
Link To Document :
بازگشت