Title :
A High Gain GaAs MESFET Frequency Quadruple
Author :
Camargo, E. ; Correpa, F.S.
fDate :
May 9 1975-June 11 1987
Abstract :
This paper presents a comprehensive analysis carried out on a frequency quadrupler from 1 to 4 GHz using a 1µm dual gate GaAs MESFET. Two different circuit options are proposed, namely with and without feedback. They were constructed on soft substrates and the preliminary microwave results are a + 10 mW output power with a 8.5 dB associated multiplication gain and 6% DC-to-RF power efficiency.
Keywords :
Feedback circuits; Frequency; Gain; Gallium arsenide; Impedance; MESFETs; Nominations and elections; Output feedback; Power generation; Power harmonic filters;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132356
