InAs/InGaAlAs/InP quantum dash lasers for telecommunication applications

Author

Gold, D. ; Schwertberger, R. ; Reithmaier, J.P. ; Forchel, A.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

Volume

1

fYear

2002

fDate

2002

Firstpage

25

Abstract

Summary form only given. In this work 1.55 μm emitting quantum dash (QDash) lasers were realized by self organized growth of InAs quantum dashes on InGaAlAs surfaces lattice matched to InP. The influence of the number of QDash layers in the active region of a laser on device performances was studied. Device results from broad area as well as from cw operating ridge waveguide (RWG) QDash-lasers are presented and discussed in relation to telecommunication applications.

Keywords

III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; indium compounds; quantum dot lasers; self-assembly; semiconductor quantum dots; waveguide lasers; 1.55 micron; InAs-InGaAlAs-InP; InAs/InGaAlAs/InP quantum dash lasers; InP; InP substrates; broad area laser; cw operating ridge waveguide lasers; gas-source molecular beam epitaxy; quantum dot layers; self organized growth; self-assembled quantum dash lasers; telecommunication applications; Chemical lasers; Indium phosphide; Laser applications; Optical materials; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1133900

Filename

1133900