1.3 μm-band low threshold GaInNAsSb quantum well lasers

Author

Shimizu, H. ; Setiagung, C. ; Ariga, M. ; Kumada, K. ; Hama, T. ; Ueda, N. ; Iwai, N. ; Kasukawa, A.

Author_Institution

Furukawa Electr. Co. Ltd., Yokohama, Japan

Volume

1

fYear

2002

fDate

2002

Firstpage

161

Abstract

1.3 μm-range GaInNAsSb quantum well lasers that include small amount of Sb as the composition were confirmed to increase the critical thickness at which the growth mode changes from the 2-dimentional (2-D) growth to the 3-dimentional (3-D) growth. By adopting GaNAs barriers instead of GaAs barriers, we obtained the very low Jth of 160A/cm²/well up to 5QWs. We applied this material to the VCSELs, and the obtained threshold currents of 10ch-arrays are as uniform as 1.85±0.15mA at 25°C.

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical transmitters; photoluminescence; quantum well lasers; surface emitting lasers; 1.3 μm-band; 1.3 micron; 25 degC; 2D growth; 3D growth; GaInNAsSb; GaInNAsSb quantum well lasers; GaNAs barriers; VCSELs; critical thickness; growth mode changes; low threshold; threshold currents; Conducting materials; Crystallization; Gallium arsenide; Laser modes; Optical materials; Quantum well lasers; Substrates; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1133977

Filename

1133977