DocumentCode
3862872
Title
Terahertz conductivity across the insulator-metal transition of epitaxial Praseodymium Nickel Oxide thin films
Author
V. E. Phanindra;Sarmistha Das;K. Santhosh Kumar;Piyush Agarwal;Rakesh Rana;D. S. Rana
Author_Institution
Indian Institute of Science and Education Research (IISER) Bhopal, Madhya Pradesh-462023, India
fYear
2015
Firstpage
1
Lastpage
2
Abstract
Here we report the low energy (0.8-7 meV) charge dynamics probed by Terahertz time domain transmission spectroscopy on 40 nm thick PrNiO3 (PNO) thin films deposited on the (LaAlO3)0.3(Sr2TaAlO6)0.7 (LSAT) (110) substrate grown by pulsed laser deposition method. We have experimentally investigated both complex dielectric constant and optical conductivity spectra with respect to temperature ranging from 5 K to 300 K. Terahertz optical conductivity for PNO thin films shows two I-M transitions at 130 K (similar to that of the bulk PNO) and a re-entrant I-M transition around 25 K. The behavior of reentrant I-M transition at 25 K may be due to the presence of Pr2NiO4 minor impurity phase.
Keywords
"Conductivity","Substrates","Optical films","Epitaxial growth","Charge carrier processes","X-ray scattering"
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN
2162-2027
Electronic_ISBN
2162-2035
Type
conf
DOI
10.1109/IRMMW-THz.2015.7327652
Filename
7327652
Link To Document