• DocumentCode
    38645
  • Title

    Impedance Variation with Subjecting to Normal Field for the Stepped Giant Magnetoimpedance Element

  • Author

    Nakai, Tomoo ; Ishiyama, Kazushi

  • Author_Institution
    Ind. Technol. Inst., Miyagi Prefectural Gov., Sendai, Japan
  • Volume
    50
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, an impedance variation for the stepped giant magnetoimpedance (GMI) element, when subjecting to a strong normal field, is reported. The stepped GMI element is an element which has an impedance-step property, which happens simultaneously with a change of magnetic domain. The strong normal field varies a profile of the sharp dip-point of the impedance-step, that is to say the normal field can control the dynamics of domain change of the element. The application of normal field also arises at a lower impedance state, which is expected as a hidden in-plane inclined Landau-Lifshitz-domain. This lower impedance state disappears by the application of in-plane magnetic field, which is larger than a certain value of threshold in absolute, and does not appear until the next application of the normal field. This element was proposed to apply a sensor with memory function in our prior work. The method reported in this paper would give a special function for the sensor application.
  • Keywords
    giant magnetoresistance; magnetic domains; domain change dynamics; hidden in-plane inclined Landau-Lifshitz-domain; impedance state; impedance-step property; in-plane magnetic field application; magnetic domain; memory function; sensor application; sharp dip-point; stepped GMI element; stepped giant magnetoimpedance element; Amorphous magnetic materials; Impedance; Magnetic domains; Magnetic hysteresis; Perpendicular magnetic anisotropy; Soft magnetic materials; Magnetic domains; magnetoimpedance; normal magnetic field; thin film;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2013.2276741
  • Filename
    6692969