Title :
Influence of initial profile approximation on volt-amp diagrams of tunnel-resonance diode
Author :
Abramov, I.I. ; Goncharenko, I.A.
Author_Institution :
Byelorussian State Univ. of Informatics & Radioelectronics, Minsk, Belarus
Abstract :
An analysis of the influence of barrier approximation and well shapes of a resonant tunneling diode (RTD) on its I-V characteristics was performed. It was shown that results are most sensitive to the approximation of a barrier potential on the heterojunction interface.
Keywords :
p-n heterojunctions; resonant tunnelling diodes; semiconductor device models; I-V characteristics; RTD; barrier approximation; heterojunction interface; initial profile approximation; resonant tunneling diode; volt-amp diagrams; well shapes; Ambient intelligence; Diodes; Helium; Hidden Markov models; IEEE catalog; Informatics; Microwave technology; Organizing; Shape; Sun;
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
DOI :
10.1109/CRMICO.2002.1137316
