DocumentCode
387014
Title
A New, Specifically Monolithic Approach to Microwave Power Amplifiers
Author
PavIidis, D. ; Archambault, Y. ; Efthimerou, M. ; Kaminsky, D. ; Bert, A. ; Magarshack, J.
Volume
83
Issue
1
fYear
1983
fDate
31 May-1 Jun 1983
Firstpage
54
Lastpage
58
Abstract
A new principle was used to build a GaAs MMIC. X-band Power Amplifier based on a modular tree design where the number of modules increase at each amplifying stage. First experimental data show 10 dB gain at the centre of the operation band (8 - 9 GHz).
Keywords
Equivalent circuits; FETs; Frequency; Gallium arsenide; High power amplifiers; Impedance matching; MMICs; Microstrip; Microwave amplifiers; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1983.1151042
Filename
1151042
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