Title :
A 4K GaAs SRAM with 1ns access time
Author :
Tanaka, Hiroya ; Yamashita, Hiromasa ; Masuda, Naoki ; Matsunaga, Nobutomo ; Miyazaki, Moriyasu ; Yanazawa, H. ; Masaki, A. ; Hashimoto, Noriaki
Author_Institution :
Hitachi Central Research Center, Tokyo, Japan
Abstract :
An SRAM fabricated in 0.7μm gate Length FETs and employing current sensing will be presented. The discussion will include means to control thermal breakdown and an internal circuit to provide an ECL reference A 3.7×4.7mm die dissipates 1.6W.
Keywords :
Capacitance; Circuits; FETs; Gallium arsenide; Intrusion detection; Power dissipation; Power generation; Random access memory; Signal generators; Temperature distribution;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157229
