Microwave photo-diode module integrated with a preamplifier IC using a flip-chip bonding technique

Author

Hatta, Tatsuo ; Miyahara, Toshiharu ; Okada, Norio ; Ota, Kingo ; Noda, Masaki ; Kaneko, Shinichi ; Itamoto, Hiromitsu ; Sekimoto, Naonobu ; Ishizaki, M. ; Ishimura, E. ; Nakaji, Masaharu

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2002

fDate

5-8 Nov. 2002

Firstpage

353

Lastpage

356

Abstract

We propose a photo-diode module integrated with a pre-amplifier IC using a novel flip-chip bonding technique. An Au stud bump is used as a bonding material, and the waveguide photodiode is directly mounted on an InP hetero bipolar transistor IC.

Keywords

III-V semiconductors; bipolar MMIC; flip-chip devices; gold; indium compounds; integrated circuit bonding; integrated circuit design; integrated circuit packaging; microwave photonics; modules; photodiodes; preamplifiers; semiconductor device packaging; 30 GHz; Au; Au bonding material; InP; InP HBT IC; PD mounting; flip-chip bonding techniques; gold stud bumps; integrated preamplifiers; microwave photo-diode modules; preamplifier IC; waveguide photodiodes; Flip-chip devices; Gold; Indium compounds; Integrated circuit design; Integrated circuit packaging; MMICs; Microwave bipolar integrated circuits; Photodiodes; Semiconductor device packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2002. International Topical Meeting on

Print_ISBN

4-88552-187-4

Type

conf

DOI

10.1109/MWP.2002.1158936

Filename

1158936