Defects produced by medium energy proton bombardment of MOS devices

Author

Lenahan, P.M. ; Mishima, T.D. ; Jumper, J.B. ; Fogarty, T.N. ; Marrero, M. ; Cruz, L. ; Shojah-Ardalan, S. ; Dwivedi, R. ; Wilkins, R. ; Trombetta, L.P. ; Singh, C.

Author_Institution

Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

105

Lastpage

109

Abstract

We report results of very sensitive electron spin resonance (ESR) and electrical measurements made on MOSFETs subjected to medium energy proton bombardment. We observe that the measured defect density levels are similar for both the ESR measurements and electrical measurements. The density of defects is observed to be larger for proton bombarded devices compared to devices irradiated with much larger doses of ⁶⁰Co gamma rays. Initial ESR and electrical measurements were made on-site soon after bombardment in the cyclotron.

Keywords

MOSFET; paramagnetic resonance; proton effects; semiconductor device measurement; ESR; MOS devices; MOSFET; Si-SiO₂; defect density; defect density levels; electrical measurements; electron spin resonance; gamma ray irradiation; medium energy proton bombardment; proton bombardment; Atomic measurements; Density measurement; Electric variables measurement; Extraterrestrial measurements; MOS devices; NASA; Paramagnetic resonance; Protons; Telephony; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159265

Filename

1159265