Effects of previous ionizing radiation exposure on programming EPROMS

Author

McNulty, Peter J. ; Yow, Sushan ; Scheick, Leif Z. ; Polge, Geraldine ; Dusseau, Laurent ; Davis, Michael G. ; Tortora, Michelle

Author_Institution

Clemson Univ., SC, USA

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

332

Lastpage

337

Abstract

Different effects are observed for FGMOS cells exposed while in "0" and "1" states. If reprogrammed to the "0" state, cells exposed in the 1 state take longer to erase under UV exposure than those cells exposed in the "0" state. This difference in UV-erasure time is attributed to charge removal from the floating gate in the "0" state cells. This difference in erasure time between the "0" and "1" states is proportional to the absorbed dose and is not dependent on annealing and temperature, a big advantage in most dosimetry applications. Cells exposed in the "1" state are also observed to fail to program at very low doses if programming is attempted within a few days of exposure.

Keywords

EPROM; electron beam effects; EPROMS programming; FGMOS cells; UV-erasure time; absorbed dose effects; charge removal; ionizing radiation exposure; Annealing; Charge measurement; Current measurement; EPROM; Electrons; Hospitals; Ionizing radiation; Nonvolatile memory; Switches; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159303

Filename

1159303