Memory irradiation measurements for the European SMART-1 spacecraft

Author

Novák, D. ; Kerek, A. ; Norlin, L.-O. ; Dajkó, G. ; Fenyvesi, A. ; Molnár, J. ; Székely, G. ; Granholm, L. ; Wallin, S. ; Matilainen, A. ; Virtanen, A.

Author_Institution

R. Inst. of Technol., Stockholm, Sweden

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

445

Lastpage

449

Abstract

Three different types of memory circuits, that are intended to be used on board of the European satellite SMART-1, have been radiation hardness tested according to ESA´s specification. Since the satellite is equipped with an electric propulsion engine, the spacecraft will be exposed to radiation during a long time when passing the radiation belt of the Earth. A standard DRAM circuit from SAMSUNG will serve as building block of the mass memory of SMART-1, and has been tested for total dose and proton induced single event upset (SEU). The DRAM memory showed surprisingly good resistance against radiation. The proton SEU cross sections for the radiation tolerant SRAM and FIFO circuits have also been measured and the results are within the requirements for SMART-1.

Keywords

DRAM chips; SRAM chips; radiation hardening (electronics); space vehicle electronics; DRAM circuit; European SMART-1 spacecraft; FIFO circuit; SRAM circuit; memory circuits; memory irradiation; proton SEU cross sections; proton induced single event upset; radiation hardness; total dose SEU; Belts; Circuit testing; Earth; Engines; Propulsion; Protons; Random access memory; Satellites; Single event upset; Space vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159320

Filename

1159320