• DocumentCode
    387405
  • Title

    Low-noise InP-based avalanche photodiodes with an impact-ionization-engineered multiplication region

  • Author

    Wang, S. ; Hurst, J.B. ; Ma, F. ; Sidhu, R. ; Sun, X. ; Zheng, X.G. ; Holmes, A.L. ; Campbell, J.C., Jr. ; Huntington, A. ; Coldren, L.A.

  • Author_Institution
    Texas Univ., Austin, TX, USA
  • Volume
    2
  • fYear
    2002
  • fDate
    10-14 Nov. 2002
  • Firstpage
    488
  • Abstract
    We report the direct growth of impact-ionization engineering (I2E) structures using InAlAs and InAlGaAs quaternary in the multiplication regions. Compared to homojunction InAlAs and InP APDs, lower excess noise and comparable dark current have been achieved.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; impact ionisation; indium compounds; semiconductor device noise; InAlAs; InAlGaAs; InAlGaAs quaternary; InP; dark current; direct growth; impact-ionization-engineered multiplication region; low-noise InP-based avalanche photodiodes; lower excess noise; Breakdown voltage; Charge carrier processes; Dark current; Electrons; Gallium arsenide; Impact ionization; Indium compounds; Performance gain; Photonic band gap; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-7500-9
  • Type

    conf

  • DOI
    10.1109/LEOS.2002.1159394
  • Filename
    1159394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=387405