DocumentCode :
387405
Title :
Low-noise InP-based avalanche photodiodes with an impact-ionization-engineered multiplication region
Author :
Wang, S. ; Hurst, J.B. ; Ma, F. ; Sidhu, R. ; Sun, X. ; Zheng, X.G. ; Holmes, A.L. ; Campbell, J.C., Jr. ; Huntington, A. ; Coldren, L.A.
Author_Institution :
Texas Univ., Austin, TX, USA
Volume :
2
fYear :
2002
fDate :
10-14 Nov. 2002
Firstpage :
488
Abstract :
We report the direct growth of impact-ionization engineering (I2E) structures using InAlAs and InAlGaAs quaternary in the multiplication regions. Compared to homojunction InAlAs and InP APDs, lower excess noise and comparable dark current have been achieved.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; impact ionisation; indium compounds; semiconductor device noise; InAlAs; InAlGaAs; InAlGaAs quaternary; InP; dark current; direct growth; impact-ionization-engineered multiplication region; low-noise InP-based avalanche photodiodes; lower excess noise; Breakdown voltage; Charge carrier processes; Dark current; Electrons; Gallium arsenide; Impact ionization; Indium compounds; Performance gain; Photonic band gap; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7500-9
Type :
conf
DOI :
10.1109/LEOS.2002.1159394
Filename :
1159394
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=387405
بازگشت