Tunable mode-locked semiconductor laser with Bragg mirror external cavity

Author

Yvind, K. ; Jørgensen, T. ; Birkedal, D. ; Skovgaard, P.M.W. ; Hanberg, Jesper

Author_Institution

COM Center, Lyngby, Denmark

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

789

Abstract

We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have shown the potential of a tuning range above 100 nm in a single mechanical stable device.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser mirrors; laser mode locking; laser tuning; quantum well lasers; 10 GHz; 4 to 6 ps; Bragg mirror external cavity; GaAs-AlGaAs; simplified design; single mechanical stable device; tunability; tunable mode-locked semiconductor laser; tuning range; wavelength tunable external cavity mode-locked laser; wedged GaAs/AlGaAs Bragg mirror; Bandwidth; Gallium arsenide; Laser mode locking; Laser tuning; Mirrors; Optical design; Optical pulses; Reflectivity; Semiconductor lasers; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159544

Filename

1159544