Total Dose Hardness of ${\rm TiN}/{\rm HfO}_{\rm x}/{\rm TiN}$ Resistive Random Access Memory

Resistive random access memory based on TiN/HfO_x/TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and after ⁶⁰Co gamma irradiation. Monoclinic HfO_x deposited at 400^°C did not result in resistive switching. Deposition at 300^°C and 350^°C resulted in cubic HfO_x which switched successfully. Both stoichiometric HfO₂ and sub-oxides HfO_2-x result in similar memory characteristics. All devices are shown to be radiation hard up to 10 Mrad(Si), independent of stoichiometry.