DocumentCode
389013
Title
Noise performance and bias-dependence of Si/SiGe HBT´s at microwave frequencies
Author
Maio, B. Di ; Prima, F. Di
Author_Institution
Lab. of Microwave Electron., Palermo Univ., Italy
fYear
2001
fDate
14-14 Sept. 2001
Firstpage
115
Lastpage
118
Abstract
The results of an investigation on the bias-dependence of the noise performance of Si/SiGe HBT´s over the 5-25 GHz frequency range are reported. The noise parameters /spl Gamma//sub o/ and R/sub n/ have been derived from a model analysis based on measurements of the device scattering parameters and minimum noise figure F/sub o/.. The noise behaviour of the HBT and its bias dependence is compared with that of low-noise HEMT´s and advanced polysilicon BJT´s previously characterised and modelled in our lab.
Keywords
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; silicon; 5 to 25 GHz; 5-25 GHz; Si-SiGe; Si/SiGe HBT; bias dependence; device scattering parameters; model analysis; noise figure; noise parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-00-6
Type
conf
Filename
1173723
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