DocumentCode
389014
Title
Low noise C-band amplifier
Author
Alybin, V.G. ; Zyablikov, S.Y. ; Parusov, A.A. ; Blinov, E.Y.
Author_Institution
FSUE SPO ORION, Moscow, Russia
fYear
2001
fDate
14-14 Sept. 2001
Firstpage
119
Lastpage
120
Abstract
The results of design of low noise amplifier for C-band satcom stations are presented. 40 K of noise temperature and more than 60 dB gain have been obtained in 500 MHz bandwidth with WSVR less than 1.2. The amplifier includes four stages: amplifier, DC linear controller of supply voltage, low noise regulated GaAs FET bias and matching circuits. Minimal number of construction units ensures high reliability and low cost of serial production.
Keywords
integrated circuit noise; microwave amplifiers; microwave integrated circuits; satellite communication; 40 K; 40K noise temperature; 500 MHz; 500MHz bandwidth; 60 dB; 60dB gain; C-band satcom stations; GaAs FET; WSVR below 1.2; low noise amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-00-6
Type
conf
Filename
1173724
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